Superradiance dynamics in semiconductor laser diode structures.
Identifieur interne : 000A32 ( Main/Exploration ); précédent : 000A31; suivant : 000A33Superradiance dynamics in semiconductor laser diode structures.
Auteurs : RBID : pubmed:22535041English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Gallium, Indium.
- Computer Simulation, Computer-Aided Design, Equipment Design, Equipment Failure Analysis, Lasers, Semiconductor, Models, Chemical, Quantum Dots.
Abstract
We analyze theoretically the superradiant emission (SR) in semiconductor edge-emitting laser heterostructures using InGaN/GaN heterostructure quantum well (QW) as a model system. The generation of superradiant pulses as short as 500 fs at peak powers of over 200 W has been predicted for InGaN/GaN heterostructure QWs with the peak emission in the blue/violet wavelength range. Numerical simulations based on semiclassical traveling wave Maxwell-Bloch equations predict building up of macroscopic coherences in the ensemble of electrons and holes during SR pulse formation. We show that SR is covered by the Ginzburg-Landau equation for a phase transition to macroscopically coherent state of matter. The presented theory is applicable to other semiconductor materials.
PubMed: 22535041
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The generation of superradiant pulses as short as 500 fs at peak powers of over 200 W has been predicted for InGaN/GaN heterostructure QWs with the peak emission in the blue/violet wavelength range. Numerical simulations based on semiclassical traveling wave Maxwell-Bloch equations predict building up of macroscopic coherences in the ensemble of electrons and holes during SR pulse formation. We show that SR is covered by the Ginzburg-Landau equation for a phase transition to macroscopically coherent state of matter. The presented theory is applicable to other semiconductor materials.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">22535041</PMID><DateCreated><Year>2012</Year><Month>04</Month><Day>26</Day></DateCreated><DateCompleted><Year>2012</Year><Month>08</Month><Day>20</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1094-4087</ISSN><JournalIssue CitedMedium="Internet"><Volume>20</Volume><Issue>9</Issue><PubDate><Year>2012</Year><Month>Apr</Month><Day>23</Day></PubDate></JournalIssue><Title>Optics express</Title><ISOAbbreviation>Opt Express</ISOAbbreviation></Journal><ArticleTitle>Superradiance dynamics in semiconductor laser diode structures.</ArticleTitle><Pagination><MedlinePgn>9501-15</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1364/OE.20.009501</ELocationID><Abstract><AbstractText>We analyze theoretically the superradiant emission (SR) in semiconductor edge-emitting laser heterostructures using InGaN/GaN heterostructure quantum well (QW) as a model system. The generation of superradiant pulses as short as 500 fs at peak powers of over 200 W has been predicted for InGaN/GaN heterostructure QWs with the peak emission in the blue/violet wavelength range. Numerical simulations based on semiclassical traveling wave Maxwell-Bloch equations predict building up of macroscopic coherences in the ensemble of electrons and holes during SR pulse formation. We show that SR is covered by the Ginzburg-Landau equation for a phase transition to macroscopically coherent state of matter. 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